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MITSUBISHI TRANSISTOR MODULES
QM150CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM150CY-H
* * * * *
IC Collector current ........................ 150A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION UPS, CVCF
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
6 23
95 80 23 23.5
6 5.5
B2X
B2 E2 E2 E1
B1X
E1 B1
6 12 6 21.5
B2X
62 48 30
C2
E2E1
C1
B2 E2
C2
C1
B1X E1 B1
M5 Tab#110, t=0.5
7 30
LABEL
21
12
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 150 150 690 9 1500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M5
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=150A, IB=2A -IC=150A (diode forward voltage) IC=150A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=150A, IB1=-IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 150 2.0 2.5 1.85 -- 2.5 12 3.0 0.18 0.6 0.1 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
300 Tj=25C IB=3.0A 240 IB=2.0A 180 IB=1.0A IB=0.5A 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
VCE=5.0V VCE=2.0V
DC CURRENT GAIN hFE
Tj=25C Tj=125C
60
IB=0.1A
0
0
1
2
3
4
5
7 5 3 2 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1
VCE=2.0V Tj=25C
VBE(sat) VCE(sat)
SATURATION VOLTAGE
IB=2A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2
2.6
3.0
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 4
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
10 2 7 5 3 2 10 1 7 5 3 2 VCC=300V IB1=-IB2=3A Tj=25C Tj=125C
ton, ts, tf (s)
Tj=25C Tj=125C
ts
3
2 IC=200A 1 IC=50A IC=100A IC=150A
SWITCHING TIME
0 10 -1 2 3 4 5 710 0 2 3 4 5 7 10 1 2 3 45 7 10 2
10 0 ton tf 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
2 10 1 7 5 4 3 2
REVERSE BIAS SAFE OPERATING AREA
400 Tj=125C
ts, tf (s)
ts
COLLECTOR CURRENT IC (A)
300 IB2=-2A 200 IB2=-5A
SWITCHING TIME
tf 10 0 VCC=300V 7 IC=150A 5 IB1=3A 4 Tj=25C 3 Tj=125C 2 10 -1 2 3 4 5 7 10 0
100
2 3 4 5 7 10 1
0
0
200
400
600
800
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 100 90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
tw=50S 100S
DERATING FACTOR (%)
10 2 7 5 3 2
50 0 1m S
S
S
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
10 m
10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 0.2
0.16
DC
80 100 120 140 160
VCE (V)
CASE TEMPERATURE
TC (C)
10 7 5 3 2
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3
Zth (j-c) (C/ W)
0.12
0.08
10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 0.4 0.8 1.2
0.04 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
Tj=25C Tj=125C 1.6 2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150CY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A)
1600 1400 1200
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL)
10 3 10 2 7 VCC=300V 5 IB1=-IB2=3.0A 3 Tj=25C 2 Tj=125C 10 2 10 1 7 5 3 2 Qrr Irr 10 1 10 0 7 5 3 trr 2 0 10 -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
Irr (A), Qrr (c)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0
0.8
Zth (j-c) (C/ W)
0.6
0.4
0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
TIME (s)
Feb.1999
trr (s)

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